http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2001050577-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2621 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2001-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fa8a8cde2192e27660d9fc000eaaf45 |
| publicationDate | 2001-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2001050577-A1 |
| titleOfInvention | TFT and reliability evaluation method thereof |
| abstract | In a method of evaluating the reliability of a TFT, time coefficient β, voltage coefficient d and temperature coefficient φ 0 are experimentally produced from −BT stress tests, and the life of a TFT under −BT stress conditions is evaluated using the following expression: n τ = t 0 ( Δ V th τ Δ V th0 ) β exp β q φ 0 kT exp ( - β qd V G 2 kTt OX ) ( 8 ) n n where τ represents the life time of the TFT, ΔV thτ the tolerant threshold voltage shift amount of the TFT, t 0 (1/ΔV th0 ) constant, q elementary electric charge, k Boltzmann constant, T temperature, V G gate voltage, and t OX the thickness of the gate oxide film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8183879-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009322371-A1 |
| priorityDate | 1993-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.