| abstract |
A method of fabricating polycrystalline thin films based on IIA-group, IIIA-group, IVA-group, transition, or inner-transition metal sulfides or selenides by surface reaction and vapor phase reaction by using coordination metal compounds, adducted with neutral ligands and H 2 Z (Z=S, Se) as precursors. The present invention also discloses a method of fabricating metal oxide polycrystalline thin films based on IIA-group, IIIA-group, IVA-group, transition, or inner-transition metal oxides by surface reaction and vapor phase reaction by using coordination metal compounds, adducted with neutral ligands as one of precursors. Main object of the present invention is to provide a method of fabricating high quality EL device using the above technique. |