| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81cfb88d909c75104c0c8d61799a72b0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G35-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2001-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfe03a7e12785a86a03e6f0b27094c98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0554adb59e5f73933015b8f069270c94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_408c5c237358db939f26cc511c4b1005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6244ab6f4a4f43664998ba853ccd6f92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c19bf2a7e5305f2d913434c83573e608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ba17416139a5acf93ea5aa544825382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_171921e250876e66c1b9600f026312da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a85c78e06e375270875590605b7fcb2 |
| publicationDate |
2001-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2001041374-A1 |
| titleOfInvention |
Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices |
| abstract |
A low temperature CVD process using a tris (β-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476339-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006108621-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9184061-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6958300-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005136689-A9
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006138507-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7112485-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009321801-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011095390-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004043632-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7569400-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6495378-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004043630-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004040501-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6800254-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7041609-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006261389-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004020690-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6813136-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005160981-A9
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8088989-B2 |
| priorityDate |
1997-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |