http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2001032980-A1

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filingDate 2001-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bb0e21b400fcb708abaeb6b099222a7
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publicationDate 2001-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2001032980-A1
titleOfInvention Semiconductor device having a thin film field-effect transistor, liquid crystal display device, and production method thereof
abstract A highly reliable semiconductor device is provided. The semiconductor device is provided with a thin film field-effect transistor having a channel region and includes a substrate and a semiconductor film. The semiconductor film is formed on the substrate and includes the channel region of the thin film field-effect transistor. An upper surface of the semiconductor film is planarized by removing a surface layer of the semiconductor film.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997543-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008237593-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002179908-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7781076-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009001353-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008073793-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9362273-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7132317-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007065995-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7755198-B2
priorityDate 2000-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.