| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2c78d80e9d323ad7c79518c80e0b8d16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76874 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 |
| filingDate |
2001-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fabf330e909bc46a4272d3c2335d189d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34f992243be21ab7ec9083ea267748c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_741869c8e14941336be365857d191243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7878e5961d9b1dec2267590dc241db18 |
| publicationDate |
2001-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2001029099-A1 |
| titleOfInvention |
Method to deposit a copper layer |
| abstract |
A new method of depositing a copper layer, using disproportionation of Cu(I) ions from a solution stabilized by a polar organic solvent, for single and dual damascene interconnects in the manufacture of an integrated circuit device has been achieved. A dielectric layer, which may comprise a stack of dielectric material, is provided overlying a semiconductor substrate. The dielectric layer is patterned to form vias and trenches for planned dual damascene interconnects. A barrier layer is deposited overlying the dielectric layer to line the vias and trenches. A simple Cu(I) ion solution, stabilized by a polar organic solvent, is coated overlying said barrier layer. Water is added to the stabilized simple Cu(I) ion solution to cause disproportionation of the simple Cu(I) ion from the Cu(I) ion solution. A copper layer is deposited overlying the barrier layer. The copper layer may comprise a thin seed layer for use in subsequent electroplating or electroless plating of copper or may comprise a thick copper layer to fill the vias and trenches. The integrated circuit is completed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015024588-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9142452-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6506668-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9373541-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009117731-A1 |
| priorityDate |
2000-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |