| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 |
| filingDate |
1998-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30d8b9162ec1f8536a5d7c60aed6fad9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf93409404dcd9c4f0a5846ce8df772a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef7aff9906b05bb0c56c34c66e8f2f7a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_461406b5e057508d950bd3c45fe88dab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c10f43768b1bee49720f4bf80c8cdae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72b441a86906b8a54d97e639b9bb6049 |
| publicationDate |
2001-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2001021577-A1 |
| titleOfInvention |
Method for forming sidewall spacers using frequency doubling hybrid resist and device formed thereby |
| abstract |
The preferred embodiment of the present invention overcomes the disadvantages of the prior art by using hybrid resist to define a sidewall spacer region and form a new type of sidewall spacer. The preferred method allows for more controlled doping at the gate-source and gate-drain junctions by defining sidewall spacer troughs using hybrid resist. Implants can then be made through the troughs to precisely control the doping at the gate junctions. Additionally, sidewall spacers can then be formed in the sidewall spacer troughs. The dimensions of the sidewall spacers is determined by the hybrid resist and can thus be made smaller than traditional resist processes. Additionally, forming the sidewall spacers using hybrid resist allows for their width to be determined independent of the depth of the gate material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9054160-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9343354-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8822137-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006266990-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7358521-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8795556-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8900988-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9209126-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8232198-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005143270-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9245791-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9236298-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490202-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8890318-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299847-B2 |
| priorityDate |
1997-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |