http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2001016420-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2648 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2001-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_243c84d5defd1145bda2edcb6ee8c61c |
| publicationDate | 2001-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2001016420-A1 |
| titleOfInvention | Fix the glassivation layer's micro crack point precisely by using electroplating method |
| abstract | A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate are immersed in a CuSO 4 —H 2 O solution. A positive dc voltage is applied to the copper plate, the dc current ionizes the CUSO 4 solution and forms Cu 2+ ions. These Cu 2+ ions will diffuse to the wafer surface. Defects in the glassification surface will absorb most of the Cu 2+ ions, concentrations of Cu 2 ions will therefore from around these defects. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7011979-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6919214-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004180454-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004112742-A1 |
| priorityDate | 1999-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.