| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-012
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
1998-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_296dafcd1dab96dc694b3ea655a385c2 |
| publicationDate |
2001-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2001005026-A1 |
| titleOfInvention |
Conductive thin film, a capacitor using the same and a method of manufacturing. |
| abstract |
It is an object of the present invention to provide a capacitor and a method of manufacturing the same having an electrode made of material(s) capable of carrying a fine work through etching while withstanding a high temperature thermal treatment for crystallizing dielectric materials such as ferroelectric materials and the like. The capacitor comprises a dielectric material composed by using at least a ferroelectric material or a high-dielectric material, and an electrode composed by using a material containing a noble metal, the electrode being formed on at least one side of the dielectric material, and the material of the electrode contains rhenium (Re). The capacitor is fabricated by patterning the material of the electrode contains rhenium (Re) using dry-etching method by introducing either of fluorine gas or chlorine gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7170125-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004195605-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1306889-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1306889-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7153705-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003071294-A1 |
| priorityDate |
1997-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |