| abstract |
Method for the formation of resist patterns by using a chemically amplified resist which comprises an alkali-insoluble base polymer or copolymer and an acid generator, in which the patternwise exposed film of said resist is developed with an organic alkaline developer in the presence of a surface active agent containing a higher alkyl group in a molecule thereof. The resist patterns have no drawback such as cracks and peeling, and thus can be advantageously used in the production of semiconductor devices such as LSIs and VLSIs. |