Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
filingDate |
2000-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bc7c4302cbbcad2759460741703617a |
publicationDate |
2001-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2001000415-A1 |
titleOfInvention |
Method of processing films prior to chemical vapor deposition using electron beam processing |
abstract |
A process for the treatment of the surface of dielectric films to remove moisture and other contaminants. Such treatment is done by electron beam exposure in order to prepare the surface for a subsequent chemical vapor deposition of oxide, nitride or oxynitride layers. The films are useful in the manufacture of integrated circuits. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7521098-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020006126-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005042388-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11749563-B2 |
priorityDate |
1999-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |