| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3268 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-32 |
| filingDate |
2018-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2023-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0522a9317fe52ec99a001c48223c4992
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5506a997df093bb3edf577600941205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2723dd2eb79a6e07adeb2578153a0a14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5662fbb244fda68913fd7fa3fc4edab0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8ef3a3b346d6db12b7e21979783eff8 |
| publicationDate |
2023-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11557717-B2 |
| titleOfInvention |
Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator |
| abstract |
A memory apparatus is provided which comprises: a stack comprising a magnetic insulating material and a transition metal dichalcogenide (TMD), wherein the magnetic insulating material has a first magnetization. The stack behaves as a free magnet. The apparatus includes a fixed magnet with a second magnetization. An interconnect is further provided which comprises a spin orbit material, wherein the interconnect is adjacent to the stack. |
| priorityDate |
2018-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |