| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2020-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2023-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b10bd0e531b15eb1b3072f0e96699c55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63969bc376d7882713d58fa4a71533af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de787778b5deeea4b30cdeb1bb604256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02a6374ddf90fa74da7cf2364e3e257b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_869ce49e7cba7d3cbc7f1ed9e794982c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9a4cb771e034a9fb616de92ee962c64 |
| publicationDate |
2023-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11550222-B2 |
| titleOfInvention |
Dose reduction of patterned metal oxide photoresists |
| abstract |
Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies. |
| priorityDate |
2019-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |