| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7854
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2019-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2eb2fc93416ca74a6eb4b101624b6312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fc0025682c8adb27c90d36fb33f1e1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9dc835e73f838e73c433c4bc4e924ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e5f9b44cc5ab0dc7424bc23ae2e8a3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fcfbfdf924f263fd897620023c60b62 |
| publicationDate |
2022-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11538937-B2 |
| titleOfInvention |
Fin trim plug structures having an oxidation catalyst layer surrounded by a recessed dielectric material |
| abstract |
Fin trim plug structures for imparting channel stress are described. In an example, an integrated circuit structure includes a fin including silicon, the fin having a top and sidewalls. The fin has a trench separating a first fin portion and a second fin portion. A first gate structure including a gate electrode is over the top of and laterally adjacent to the sidewalls of the first fin portion. A second gate structure including a gate electrode is over the top of and laterally adjacent to the sidewalls of the second fin portion. An isolation structure is in the trench of the fin, the isolation structure between the first gate structure and the second gate structure. The isolation structure includes a first dielectric material laterally surrounding a recessed second dielectric material distinct from the first dielectric material, the recessed second dielectric material laterally surrounding an oxidation catalyst layer. |
| priorityDate |
2019-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |