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filingDate 2020-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3a24ddc79ac630979d4827961798b61
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publicationDate 2022-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11533025-B2
titleOfInvention Integrated doherty amplifier with added isolation between the carrier and the peaking transistors
abstract The present disclosure relates to added isolation between transistors in a multiple path amplifier circuit. The multiple path amplifier circuit includes a substrate, a first transistor on the substrate in a first path, and a second transistor on the substrate in a second path. The multiple path amplifier circuit also includes at least one electrical connection associated with the first and the second transistors and positioned to at least partially extend between the first path and the second path.
priorityDate 2020-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 28.