| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7858 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2018-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d509db4cff30e86e2e04181a07559bb7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fc0025682c8adb27c90d36fb33f1e1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2eb2fc93416ca74a6eb4b101624b6312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_217d5b464ee128c1d2c67dea2fa63fa8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae19cdd8ce00b059e8266274536ff8ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6678fd2581ef2fcdb0788ecc42f2a3b0 |
| publicationDate |
2022-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11521968-B2 |
| titleOfInvention |
Channel structures with sub-fin dopant diffusion blocking layers |
| abstract |
Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, integrated circuit structures having channel structures with sub-fin dopant diffusion blocking layers are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. The lower fin portion includes a dopant diffusion blocking layer on a first semiconductor layer doped to a first conductivity type. The upper fin portion includes a portion of a second semiconductor layer, the second semiconductor layer on the dopant diffusion blocking layer. An isolation structure is along sidewalls of the lower fin portion. A gate stack is over a top of and along sidewalls of the upper fin portion, the gate stack having a first side opposite a second side. A first source or drain structure at the first side of the gate stack. |
| priorityDate |
2018-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |