http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11518937-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2020-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_358eb94eb84d648f1ad23ad0ffc95ebf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b5decb61eb61a3ad4e6238050a2fe1a |
| publicationDate | 2022-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-11518937-B2 |
| titleOfInvention | Etching solution and method for manufacturing semiconductor element |
| abstract | An etching solution for selectively performing an etching process on a compound represented by General Formula Si1-xGex, in which x is more than 0 and less than 1, with respect to Si, Ge, and oxides thereof, the etching solution including hydrofluoric acid, nitric acid, and water, in which a content ratio of the hydrofluoric acid in the entire etching solution is 0.002% by mass or more and 1.0% by mass or less, a content ratio of the nitric acid in the entire etching solution is 10% by mass or more, and a content ratio of the water in the entire etching solution is 40% by mass or less. |
| priorityDate | 2019-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 207.