| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023 |
| filingDate |
2020-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c1cd477dea4b6686be311a4d54c6709
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3d1b4a49fd1a27539f0c1f1c6c63026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d15bb1ecdfab7fd3b99e4dfd216cdbe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9b528ee3b7d18b9d123c50bac3da705 |
| publicationDate |
2022-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11515198-B2 |
| titleOfInvention |
Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions |
| abstract |
Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface. |
| priorityDate |
2017-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |