| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59c820ad08f8533c7440ae1d9235b168 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8613
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6609 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 |
| filingDate |
2020-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e284b11542ba75b566dc9eb4772a0b79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68e3f3eecaf08c195da4070390d97b22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15968783a1bccc883d8cdf4ca811a2ca |
| publicationDate |
2022-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11502190-B2 |
| titleOfInvention |
Vertical power semiconductor device, semiconductor wafer or bare-die arrangement, carrier, and method of manufacturing a vertical power semiconductor device |
| abstract |
A vertical power semiconductor device is described. The vertical power semiconductor device includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface. A thickness of the semiconductor body between the first main surface and the second main surface ranges from 40 μm to 200 μm. Active device elements are formed in the semiconductor body at the first main surface. Edge termination elements at least partly surround the active device elements at the first main surface. A diffusion region extends into the semiconductor body from the second main surface. A doping concentration profile of the diffusion region decreases from a peak concentration Ns at the second main surface to a concentration Ns/e, e being Euler's number, over a vertical distance ranging from 1 μm to 5 μm. |
| priorityDate |
2019-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |