| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_799858790a0d932d2bf525d1f2324ad6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2020-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_361d1691f606a9fb82e2a790aebb132b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2067f03728f058a736556ac3cb3a86d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_728ea5df3ececa9c32f96e067e068e25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bc60629bf4c6cf01790e75735bdc668
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57370b7eb9d5ab482389cf15db89a977
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0761a343f5a6e548d970701d7413f88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dddcc825cc8a7b4ce363ab14ab49b00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d8d2db77aa8fe5fe233fa8092014f7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f06c7d20849a886d8deeb30875d97ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f7b91041d7b7bd1603082c6de7b995e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a15e2fc7fd20a8df81600472f39be187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_701dd8942ea659d74b3b531e719c6eb9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd78a8419cafc892c1ee223a6c6367a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b111de6789cadeac0a253d5957a342b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c77b6c93d81d06b6eeb3d00b62309ba1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49da7e3a6002fa03f6a1ee19410ef245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15bfd2bde6d45aa152b9560cabf7ab0f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6690f1daff31890347e20442317d94d9 |
| publicationDate |
2022-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11495467-B2 |
| titleOfInvention |
Method and apparatus for etching thin layer |
| abstract |
Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value. |
| priorityDate |
2019-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |