| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8487464fa6768affe265413ae02be74c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-32 |
| filingDate |
2020-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7853512e16d339a87ef4d72c5d586053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38755d931a37321164faf5bb1f686ccc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e0f696d819cdddea1b2311714e6052c |
| publicationDate |
2022-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11466382-B2 |
| titleOfInvention |
Method for manufacturing rutile titanium dioxide layer and semiconductor device including the same |
| abstract |
A method for method for manufacturing a rutile titanium dioxide layer according to the inventive concept includes forming a sacrificial layer on a substrate, and depositing a titanium dioxide (TiO2) material on the sacrificial layer. The sacrificial layer includes a metal oxide of a rutile phase. An amount of oxygen vacancy of the sacrificial layer after depositing the titanium dioxide material is greater than an amount of oxygen vacancy of the sacrificial layer before depositing the titanium dioxide material. The metal oxide includes a metal different from titanium (Ti). |
| priorityDate |
2020-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |