| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d458a07fecfcab54bf6c49e2c74c6267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B19-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-14 |
| filingDate |
2017-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea7fa9187351ffa6d34b71172a5f2552
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb3522c2f307b904d59c346efe7e3b92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e535dae7c2f75adca294eb27f460b5e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1266699b680d08c5416985cba4cf8221 |
| publicationDate |
2022-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11462670-B2 |
| titleOfInvention |
Thermoelectric conversion material, thermoelectric conversion element and thermoelectric conversion module |
| abstract |
A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material. |
| priorityDate |
2016-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |