| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-00 |
| filingDate |
2015-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_669a50a434d62d32bcbe552449f91148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9961049477244124e8d45d05467d1bf5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70fbc337ac8d5a239994d1eb35a6eb63 |
| publicationDate |
2022-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11424399-B2 |
| titleOfInvention |
Integrated thermoelectric devices in Fin FET technology |
| abstract |
Operations for integrating thermoelectric devices in Fin FET technology may be implemented in a semiconductor device having a thermoelectric device. The thermoelectric device includes a substrate and a fin structure disposed on the substrate. The thermoelectric device includes a first connecting layer and a second connecting layer disposed on opposing ends of the fin structure. The thermoelectric device includes a first thermal conductive structure thermally and a second thermal conductive structure thermally coupled to the opposing ends of the fin structure. The fin structure may be configured to transfer heat from one of the first thermal conductive structure or the second thermal conductive structure to the other thermal conductive structure based on a direction of current flow through the fin structure. In this regard, the current flow may be adjusted by a power circuit electrically coupled to the thermoelectric device. |
| priorityDate |
2015-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |