| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2016-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91806f50748270c0625e2f36bcab4ff3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fdce273a9d95d799ccdf8cf8c6066c16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cdd583dda2b746a0c803e27235bca16 |
| publicationDate |
2022-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11417646-B2 |
| titleOfInvention |
NPN heterojunction bipolar transistor in CMOS flow |
| abstract |
An integrated circuit formed on a silicon substrate includes an NMOS transistor with n-channel raised source and drain (NRSD) layers adjacent to a gate of the NMOS transistor, a PMOS transistor with SiGe stressors in the substrate adjacent to a gate of the PMOS transistor, and an NPN heterojunction bipolar transistor (NHBT) with a p-type SiGe base formed in the substrate and an n-type silicon emitter formed on the SiGe base. The SiGe stressors and the SiGe base are formed by silicon-germanium epitaxy. The NRSD layers and the silicon emitter are formed by silicon epitaxy. |
| priorityDate |
2013-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |