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publicationDate 2022-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11415886-B2
titleOfInvention Lithographic patterning process and resists to use therein
abstract A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovskite material.
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