| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f517051dd4d265e5e931724f45b34ddc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate |
2020-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3174fa02b3e3508beb5273542d0ac85e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03620c9a435d9fe2eec160fda9c7eb2b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a148b92b1f8ec0844401ffae4b91828e |
| publicationDate |
2022-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11414569-B2 |
| titleOfInvention |
Composition for etching and manufacturing method of semiconductor device using the same |
| abstract |
The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. n The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics. |
| priorityDate |
2016-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |