| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01P1-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-763
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01P1-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate |
2020-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbeaee8f58b719ab1c780830c2f553d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e77a54d21d36d7a05e68090718081ed0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_648b7e03d52ce6e763b6d3b7cc55f924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afe050dd76497a14721016bfd8b31236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_345f6e5a49ddc68bb66afabef07468ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6a48658b54df6ab867d4ad7a9d174ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f8566d99c5d5e8d27e499c2788dc72a |
| publicationDate |
2022-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11410999-B2 |
| titleOfInvention |
Boundary design for high-voltage integration on HKMG technology |
| abstract |
The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed over the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer. |
| priorityDate |
2020-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |