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filingDate 2020-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11410689-B2
titleOfInvention Magnetoresistance effect element and Heusler alloy
abstract A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):Co2FeαXβ  (1)(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α<β, and 0.5<α<1.9).
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