| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36edd9295de11a5abafbc629cd9f2d57 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-373
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10829 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2020-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cdf08c0cc727f6c965ca425ff4e835e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bed02f28de6a544711009576883616b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8af02b07d438ccd85aa97e156ec7cab6 |
| publicationDate |
2022-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11398568-B2 |
| titleOfInvention |
Ferroelectric based transistors |
| abstract |
The present disclosure relates to semiconductor structures and, more particularly, to ferroelectric based transistors and methods of manufacture. The ferroelectric based transistor includes: a semiconductor-on-insulator substrate including a semiconductor material, a buried insulator layer under the semiconductor material and a substrate material under the semiconductor channel material; a ferroelectric capacitor under the buried insulator layer and which includes a bottom electrode, a top electrode and a ferroelectric material between the bottom electrode and the top electrode; a gate stack over the semiconductor material; a first terminal contact connecting to the bottom electrode of the ferroelectric capacitor; and a second terminal contact connecting to the top electrode of the ferroelectric capacitor. |
| priorityDate |
2020-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |