Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0928 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82385 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
filingDate |
2020-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_938fb562417a139693ad9ac1ec39bf16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_070bb350a8e3771b9ecd9c23bc833f21 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08da4b1e5f68c892cdc012c587f1859d |
publicationDate |
2022-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11393726-B2 |
titleOfInvention |
Metal gate structure of a CMOS semiconductor device and method of forming the same |
abstract |
A semiconductor device includes a substrate with an isolation region surrounding a P-active region and an N-active region, a first gate electrode comprising a first metal composition over the N-active region, and a second gate electrode with a center portion over the P-active region and an endcap portion over the isolation region. The endcap portion includes a first metal composition, and the center portion includes a second metal composition different from the first metal composition, and the center portion and the endcap portion do not overlap. An inner sidewall of the endcap portion is substantially aligned with a sidewall of the isolation region. |
priorityDate |
2011-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |