http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11387388-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4880e2a99a48a9c481e535386ca88b97 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-387 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 |
| filingDate | 2020-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29a6a888369d191af5ce9ac624166b9a |
| publicationDate | 2022-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-11387388-B2 |
| titleOfInvention | Light-emitting diode structure with reflective layer for improving luminous efficiency thereof |
| abstract | A light-emitting diode structure includes a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a reflective layer, and an ohmic contact layer. The light-emitting layer is disposed under the first type semiconductor layer. The second type semiconductor layer is disposed under the light-emitting layer, wherein the second type semiconductor layer includes a plurality of recesses which are recessed from a lower surface of the second type semiconductor layer toward the light-emitting layer. The reflective layer is disposed in the recesses. The ohmic contact layer is disposed under the lower surface of the second type semiconductor layer and surrounds the recesses. The light-emitting diode structure can increase the luminous efficiency greatly. |
| priorityDate | 2019-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.