| abstract |
A transistor includes a semiconductor substrate, a first source/drain region and a second source/drain region in the semiconductor substrate with a channel region between the source/drain regions, and a gate over the channel region. In addition, the transistor includes a first phase transition material (PTM) region between the first source/drain region and the channel region, and a second PTM region between the second source/drain region and the channel region. The PTM regions provide the transistor with improved off-state current (I OFF ) without affecting the on-state current (I ON ), and thus an improved I ON /I OFF ratio. The transition threshold of PTM regions from dielectric to conductor can be customized based on, for example, PTM material type, doping therein, and/or strain therein. |