| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2202-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-176 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-2257 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-025 |
| filingDate |
2020-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79cb4d689038ea99ce45455b94681232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4474142e197d0a6c55690e8f8ee0e337 |
| publicationDate |
2022-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11385484-B2 |
| titleOfInvention |
Photonic transmitter having III-V gain media and adiabatically-coupled waveguides |
| abstract |
Photonic transmitter, comprising:a stack of a first layer, second layer and third layer stacked on top of one another,a laser source comprising a first waveguide and a second waveguide.The stack comprises:a fourth layer located on the third layer, the thickness of this fourth layer being comprised between 40 nm and 1 μm in order to obtain adiabatic coupling between the first and second waveguides, anda fifth layer located directly on the fourth layer, the second waveguide being entirely structured in a III-V gain medium of this fifth layer.The first waveguide comprises a first portion made of semiconductor located inside the third layer and that extends as far as to the interface between the third and fourth layers. |
| priorityDate |
2019-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |