Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3518dca003902d9f332ad08ac9a6ffe |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2018-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7b13814be12228b7ad31a0f3a40341b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89409ef8d83a4a19fcf406df047ef3ac |
publicationDate |
2022-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11380710-B2 |
titleOfInvention |
Semiconductor device and method for manufacturing semiconductor device |
abstract |
To provide a semiconductor device capable of reducing a parasitic capacitance, securing high reliability, and suppressing an increase in manufacturing cost. A semiconductor device is provided which includes a substrate including an embedded insulation film and a semiconductor layer on the embedded insulation film and on which a semiconductor element is formed and a gate electrode on the semiconductor layer, in which the gate electrode includes a band-shaped first electrode portion that extends from a center portion of the semiconductor layer and beyond an end of the semiconductor layer along a first direction in a case where the substrate is viewed from above, and in a cross section in a case where the first electrode portion and the substrate are cut along the first direction, a film thickness of the end of the semiconductor layer is thicker than a film thickness of the center portion of the semiconductor layer. |
priorityDate |
2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |