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filingDate 2019-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ffddd2743e50d5e496bbae691d3eed9
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publicationDate 2022-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11367790-B2
titleOfInvention Body-contacted field effect transistors configured for test and methods
abstract Test structures for a body-contacted field effect transistor (BCFET) include: a single-pad structure with body contact and probe pad regions connected to a channel region at first and second connection points with a known separation distance between the connection points; and a multi-pad structure with a body contact region connected to a channel region at a first connection point and multiple probe pad regions connected to the channel region at second connection points that are separated from the first connection point by different separation distances. A method includes: determining separation distance-dependent internal body potentials at the second connection points in response to different bias conditions by using either multiple single-pad structures, each having a different separation distance between the connection points, or by using a multi-pad structure; and based on the separation distance-dependent internal body potentials, generating a model representing the BCFET with body-contacted and floating body devices.
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