http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355625-B2

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57a775e501cda4f0ed02d46201e07722
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e565b6678873d9f256e8fec9ada071ee
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
filingDate 2020-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a231d4bf71d9684d4a91f37a00a2915
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a4100d88b46e0ef7a0068a7ee3c9663
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fb40e8713310e0f5d7953be180ec5a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93159d19d52b0f1fe1586f8d92a6ae68
publicationDate 2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11355625-B2
titleOfInvention Device and semiconductor structure for improving the disadvantages of p-GaN gate high electron mobility transistor
abstract A device includes a first transistor and a second transistor. The first transistor includes a first gate terminal coupled to the first source terminal, a first source terminal, and a first drain terminal. The second transistor includes a second gate terminal coupled to the first drain terminal, a second source terminal, and a second drain terminal.
priorityDate 2020-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016293601-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID31170
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82901
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419545842
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3468413
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522147
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524988
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557764
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID91500

Total number of triples: 37.