| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1446e3b83ab7ebbb0c0de28515c743a6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-945
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-54426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-54493 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B28D5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-6455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| filingDate |
2020-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf12f7da059b9be2edb052dac2581809
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cc26777cfc314797afb14c15860d695 |
| publicationDate |
2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11355448-B2 |
| titleOfInvention |
Method for making aluminum nitride wafer and aluminum nitride wafer made by the same |
| abstract |
The present invention provides an aluminum nitride wafer and a method for making the same. The method includes forming at least one alignment notch in or at least one flat alignment edge on a periphery of the aluminum nitride wafer. The alignment notch and the flat alignment edge can prevent the aluminum nitride wafer from being in a poor state during the semiconductor manufacturing process and makes it possible to position the aluminum nitride wafer precisely so that the fraction defective can be lowered. The aluminum nitride wafer of the present invention has advantages of effective insulation, efficient heat dissipation, and a high dielectric constant, and can be used in semiconductor manufacturing processes, electronic products, and semiconductor equipment. |
| priorityDate |
2020-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |