| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5343449906e9a0e9206b25abb477454e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0607
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-66 |
| filingDate |
2020-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1224e64f0edb0922f2901260afeb2802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c13271fae206d724d26d4b511464022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e626f35d8eca7382445472b3cdce069f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_651b0a3c6d0b3f42bb687f3b9fc37fa0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ad8175e113af5f7ce22848142393ba2 |
| publicationDate |
2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11355340-B2 |
| titleOfInvention |
Semiconductor material having tunable permittivity and tunable thermal conductivity |
| abstract |
A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein. |
| priorityDate |
2019-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |