| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af4cc10d515454e59278de7445531247 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2020-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bde432e410720ac820183f8a95257cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ef83f044ce863f6f186d237732199e8 |
| publicationDate |
2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11335780-B2 |
| titleOfInvention |
Epitaxial structure |
| abstract |
An epitaxial structure includes a substrate, a buffer layer, a back diffusion barrier layer, a channel layer formed on the back diffusion barrier layer, and a barrier layer formed on the channel layer. The buffer layer is formed on the substrate. The back diffusion barrier layer is formed on the buffer layer. The chemical composition of the back diffusion barrier layer is Al x In y Ga 1-x-y N, wherein 0≤x≤1 and 0≤y≤1. The lattice constant of the back diffusion barrier layer is between 2.9 Å and 3.5 Å. The back diffusion barrier layer is composed of a plurality of regions in the thickness direction, and the aluminum (Al) content and the indium (In) content of the back diffusion barrier layer are changed stepwise or gradually changed stepwise along the thickness direction. The back diffusion barrier layer further includes carbon, and the carbon concentration is changed stepwise or gradually changed stepwise along the thickness direction. |
| priorityDate |
2019-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |