| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10867
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
2019-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d20ccb3cf53188077c8cc39795098d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_409848d861de35f1019cd49575590150
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd38393a293c133930f26332d94b6417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b213f107a35b2f4931c6b1772f904c45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fc0025682c8adb27c90d36fb33f1e1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59dc65b37a9984e3666e1d6380efd0ff |
| publicationDate |
2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11335686-B2 |
| titleOfInvention |
Transistors with back-side contacts to create three dimensional memory and logic |
| abstract |
Described herein are IC devices that include transistors with contacts to one of the source/drain (S/D) regions being on the front side of the transistors and contacts to the other one of the S/D regions being on the back side of the transistors (i.e., “back-side contacts”). Using transistors with one front-side and one back-side S/D contacts provides advantages and enables unique architectures that were not possible with conventional front-end-of-line transistors with both S/D contacts being on one side. |
| priorityDate |
2019-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |