| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2020-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7cd0b0ce55ac28165e8731b4007eb77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0c5da25cd01a80b81111149032694e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c9d1d7abafbaf05c5d4c8578750ae5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fde2ff82f1d11ca9802d5adf331313fa |
| publicationDate |
2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11335554-B2 |
| titleOfInvention |
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
| abstract |
There is provided a technique that includes: (a) modifying a surface of one base among a first base and a second base to be F-terminated by supplying a fluorine-containing radical generated from a fluorine-containing gas to a substrate where the first base and the second base are exposed at a surface of the substrate; and (b) forming a film on a surface of the other base, which is different from the one base, among the first base and the second base by supplying a film-forming gas to the substrate after modifying the surface of the one base. |
| priorityDate |
2019-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |