| abstract |
The present invention relates to the field of chemical industry, and discloses organosilicone micro-mesoporous ultra-low dielectric thin films and preparation methods therefor. A structural formula of a POSS-based organosilane precursor in the thin film is as follows: n n n n n n n n n n n n where n is 12, 16, 18, 20, or 22, and X is CH 3 or CH 2 CH 3 . The preparation method includes the following steps: dissolving a certain amount of the POSS-based precursor in an organic solvent at a room temperature; adding an appropriate amount of a photoacid generator, after uniformly stirring, spraying a mixed liquid to form a film on a substrate; placing the substrate under a light-emitting diode lamp for irradiating for a preset time after the organic solvent is completely evaporated; then placing the substrate in N,N-dimethylformamide for undergoing a transesterification reaction with fluoroalkyl alcohol for 24-72 h; and washing and drying to obtain the organosilicone micro-mesoporous ultra-low dielectric thin film. Compared with existing ultra-low dielectric thin films, the obtained thin film has a lower dielectric constant (1.89), and is better in dielectric stability in a humid environment, simple to operate, and high in polymerization speed. |