| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate |
2019-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beb48613781b13d416dfec0b7497a4e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db22f76d9fb4b5cb54580ca008c3f6dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcc8c2aa231991d3f08209fc3f11c9fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c27de9ab70ca903e3213ff7df2df844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76219a769b166e3a7e9ad988ee368763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e594b5f7629277aa3ea847c47c4a1c3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_146737ffcffa448cbf60421630be3e31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b686f9846ed8634217bb625613e0b676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b91e82f28b6ca1b132b7bfd53ad1f640 |
| publicationDate |
2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11322411-B2 |
| titleOfInvention |
Pre-deposition treatment for FET technology and devices formed thereby |
| abstract |
Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers. |
| priorityDate |
2018-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |