http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11322358-B2

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filingDate 2019-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a6e53c34e1658dccd98e99ef5912097
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publicationDate 2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11322358-B2
titleOfInvention Method of laser irradiation of a patterned semiconductor device
abstract Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.
priorityDate 2018-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 30.