| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4991
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2020-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a51ffbf6610e831acb04a1851e42ec0c |
| publicationDate |
2022-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11302814-B2 |
| titleOfInvention |
Semiconductor device with porous dielectric structure and method for fabricating the same |
| abstract |
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, two conductive features positioned apart from each other over the substrate, and a porous middle layer positioned between the two conductive features and adjacent to the two conductive features. A porosity of the porous middle layer is between about 25% and about 100%. |
| priorityDate |
2020-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |