Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6caea61bfde8a45e01a8deabff80d97 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1157 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11519 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11524 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7926 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11524 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11519 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
filingDate |
2020-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83bf1ea458a259cdb7a97128710a2942 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2442f78fc9835ecdbe086c06c1676c8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b958727217c5d02e2dda59810ff127a |
publicationDate |
2022-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11302714-B2 |
titleOfInvention |
Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same |
abstract |
A three-dimensional memory device includes a source contact layer overlying a substrate, an alternating stack of insulating layers and electrically conductive layers located overlying the source contact layer, and a memory opening fill structure located within a memory opening extending through the alternating stack and the source contact layer. The memory opening fill structure includes a composite semiconductor channel and a memory film laterally surrounding the composite semiconductor channel. The composite semiconductor channel includes a pedestal channel portion having controlled distribution of n-type dopants that diffuse from the source contact layer with a lower diffusion rate provided by carbon doping and smaller grain sizes, or has arsenic doping providing limited diffusion into the vertical semiconductor channel. The vertical semiconductor channel has large grain sizes to provide high charge carrier mobility, and is free of or includes only a low concentration of carbon atoms and n-type dopants therein. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11600634-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11552100-B2 |
priorityDate |
2020-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |