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filingDate 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11296277-B2
titleOfInvention Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same
abstract A variable resistance memory device is provided including a plurality of lower electrodes disposed on a substrate. A plurality of variable resistors are disposed on the plurality of lower electrodes. A plurality of upper electrodes are disposed on the plurality of variable resistors. An interlayer insulating layer fills a space in the plurality of variable resistors. An anti-oxidation layer is disposed between the plurality of variable resistors and the interlayer insulating layer. The anti-oxidation layer covers side surfaces of the plurality of variable resistors, and the anti-oxidation layer comprises silicon and/or carbon.
priorityDate 2018-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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