| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0558
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 |
| filingDate |
2019-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba2a44998c2b024b1329fdd36284958e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b91780c91482364634a2c98c2791ef6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cacc40decfeb83f38ffb47034c315363 |
| publicationDate |
2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11276832-B2 |
| titleOfInvention |
Semiconductor structure with diffusion break and method |
| abstract |
The current disclosure describes techniques for forming semiconductor structures having multiple semiconductor strips configured as channel portions. In the semiconductor structures, diffusion break structures are formed after the gate structures are formed so that the structural integrity of the semiconductor strips adjacent to the diffusion break structures will not be compromised by a subsequent gate formation process. The diffusion break extends downward from an upper surface until all the semiconductor strips of the adjacent channel portions are truncated by the diffusion break. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022181565-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11653507-B2 |
| priorityDate |
2018-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |