Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0638 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2020-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_573aeecd7b98dbd4de4ad04458798264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51fd586b4e2c7df058fe0fc07c6de169 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29e8fe8ab437c31ecb8e443307b2957e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cbc3cd2848547eac327cfe0a7c0f83d |
publicationDate |
2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11276643-B2 |
titleOfInvention |
Semiconductor device with backside spacer and methods of forming the same |
abstract |
Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a power rail; a bottom semiconductor layer formed over the dielectric layer; a backside spacer formed along a sidewall of the bottom semiconductor layer; a conductive feature contacting a sidewall of the dielectric layer and a sidewall of the backside spacer; channel semiconductor layers over the bottom semiconductor layer, wherein the channel semiconductor layers are stacked up and separated from each other; a metal gate structure wrapping each of the channel semiconductor layers; and an epitaxial source/drain (S/D) feature contacting a sidewall of each of the channel semiconductor layers, wherein the epitaxial S/D feature contacts the conductive feature, and the conductive feature contacts the power rail. |
priorityDate |
2020-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |