| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6caea61bfde8a45e01a8deabff80d97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11585
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-223 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11585
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2020-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08653b61176dcc19ca85674d92b3b140
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d08019e35ae792f39ec9953159610dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c01d3370eee9de55fda3e5a334a6d1e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0515c5c51d644aff7742960f68686d3f |
| publicationDate |
2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11271009-B2 |
| titleOfInvention |
Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same |
| abstract |
A ferroelectric memory device contains a two-dimensional semiconductor material layer having a band gap of at least 1.1 eV and at least one of a thickness of 1 to 5 monolayers of atoms of the semiconductor material or includes a two-dimensional charge carrier gas layer, a source contact contacting a first portion of the two-dimensional semiconductor material layer, a drain contact contacting a second portion of the two-dimensional semiconductor material layer, a ferroelectric memory element located between the source and drain contacts and adjacent to a first surface of the two-dimensional semiconductor material layer, and a conductive gate electrode located adjacent to the ferroelectric memory element. |
| priorityDate |
2018-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |