http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11267699-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e6ddf53a7a8db01a5314268a2c323b9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0166 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0235 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-036 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00166 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0089 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-001 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate | 2020-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25d422bff1cc39c11d610e68f22f9a74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa21891848dafa097a633b0586b5c075 |
| publicationDate | 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-11267699-B2 |
| titleOfInvention | Modification to rough polysilicon using ion implantation and silicide |
| abstract | A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method comprises forming a MEMS layer, wherein the forming comprises fusion bonding a handle layer with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius. |
| priorityDate | 2019-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.